PCA M2V03VT-C
Plsama Cleaner Asher
M2V03VT-C Plasma System and Supplies
VacTechniche range of Plasma Cleaner/Asher (desktop reaction chamber) unit can facilitate the removal of atomic contamination, removal of Oxides, and Hydrophilic/Hydrophobic plasma treatment.
There are many differences between the nature of plasma, at 40 kHz, 400 KHz Microwave and 13.56 MHz RF.
However, it may be possible to use all of these frequencies in some applications.
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In general, at low frequencies, both electrons and ions are displaced in the plasma medium. Ions have a negative or positive electric charge, and the mass of ions is much higher than that of an electron.
At the low frequencies, there is ample opportunity to move both ions and electrons.
At the higher frequency, the less opportunity the ions have to move.
Allowing the plasma density to increase at high frequencies.
Plasma densities are generally higher at RF frequencies than at Low Frequency (LF).
In addition, due to the acceleration of ions, which have a high mass, the phenomenon of sputtering of the sample and the surface of the product or the contamination caused by the chamber walls are higher in the LF frequency. resulting in the transfer of more heat load to the sample, due to then LF the accelerated particles collide at a hight rate.
Low Frequency PlasmaPhysical operations
High frequency is the best option for performing chemical interactions at the surface of a product or sample. Due to the electrons that produce ions and radicals, producing plasma.
In this case the Ions motility is small, they do not have a destructive effect and under these conditions, there are large numbers of ions and radicals on the surface of the product or sample that are ready to undergo chemical reactions.
In addition, with increasing frequency, other parameters such as internal bias also decrease.
As the frequency increases (towards the microwave), the plasma changes from a volumetric uniform plasma to a surface plasma (due to the penetration depth limitations).
And other differences…
Key areas:
One or two gas input options Argon, Oxygen, Nitrogen, forming gas for Hydrogen gas cracking.
Flow meter or Mass flow controller
Three Frequencies to select from. ( RF could be upgradable if planned at the build stage)
Heated sample upto 350 centigrade
PCA M2V03VT-CMore Details
The optional vapour delivery inlet can extend the use to liquid precursors and a
corrosion resistant work increases the application range to cover material treatments including;
Plasma cleaning
• Plasma surface activation to improve adhesion
• Functional plasma coatings
• Plasma etching
• PDMS & microfluidic devices
• PEEK & other engineering polymers
• PTFE
• Metals
• Ceramics
• Glass & optical devices
M2V03 Specs:
Parameter
Value – options
Chamber
Size: diameter:125 mm, length: 240 mm.
Main body Material: Pyrex.
Sample holder: Aluminum
Plasma generator
RF Gen and Auto matching :13.56MHz
Power: 0 to 2000w
40Khz
400KHz
Input gas
two input gas.
MFC or needle valve gas control .
Control and Monitor
Graphical and touch control panel
Parameters: vacuum pressure, time,rotameter gas flow, plasma power, system components automatic and manual safe enable/disable.
Automatic process management.
Plasma Generation
External capacitive electrodes.
Vacuum pump
2-stage Oil-sealed Rotary Vane Pump
Vacuum gauge
Corrosion resistant Pirani gauge
Case
Dimensions: 420*500*220 mm (W,L,H)
Material: Aluminum.
Main input power
220v AC. 50 Hz – 60Hz
Catalogue and More Info
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M2V03VT-C Catalogue
VacTechniche Plsama Cleaner Asher
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